point light source led chip gaasp/gaas 1. material substrate gaas (n type) epitaxial layer gaasp (p/n type) 2. electrode n(cathode) side gold alloy p(anode) side aluminum alloy 3. electro-optical parameter s ymbo l min typ max unit condition characteristics f orward voltag e v f 1.68 v if=10ma reverse voltag e v r 5 v ir=10ua power p o 0.4 mw if=10ma d 650 nm if=10ma ? 35 nm if=10ma note : led chip is mounted on to-18 gold header without resin coa t 4. mechanical data (a) emission area ---------------------- - 8.3mil x 8.3mil (b) bottom area ---------------------- - ####### ##### (c) bonding pad ---------------------- - 100um (d) chip thickness ---------------------- - 7mil eoyang factory,513-5 eoyang-dong, iksan, 570-210, korea tel. +82 63 839 1111 fax. +82 63 835 8259 www.auk.co.kr OPA6530SR wavelength auk corp.
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